InAs-based quantum cascade light emitting structures containing a double plasmon waveguide

K. Ohtani, H. Sakuma, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Type-II InAs/GaSb/AlSb intersubband light emitters have a great potential over the type-I intersubband emitters because of its unique InAs/GaSb broken gap, the large optical gain and long optical phonon non-radiative relaxation time expected from the small effective mass of InAs quantum well (QW). Here we describe molecular epitaxy growth of InAs-based quantum cascade (QC) structures containing a double plasmon waveguide and its emission properties.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-40
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002 Jan 1
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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