InAs-based quantum cascade light emitting structures containing a double plasmon waveguide

K. Ohtani, H. Sakuma, H. Ohno

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

Molecular beam epitaxy and electroluminescence properties of InAs-based quantum cascade light emitting structure containing an InAs double plasmon waveguide are reported. Samples are prepared using low group-V flux and controlled interface bonds during molecular beam epitaxy resulting in high structural and optical qualities. Electroluminescence measurements indicate that it is necessary to reduce the operating electric fields to avoid band-to-band tunneling in narrow gap semiconductor cascade devices.

Original languageEnglish
Pages (from-to)718-722
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20

Keywords

  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B3. Heterojunction semiconductor devices
  • B3. Light emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'InAs-based quantum cascade light emitting structures containing a double plasmon waveguide'. Together they form a unique fingerprint.

Cite this