InAs-based micromechanical two-dimensional electron systems

H. Yamaguchi, S. Miyashita, Y. Tokura, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We review our recent experimental studies of InAs-based micromechanical two-dimensional electron systems. Integrating semiconductor low-dimensional structures in micromechanical cantilevers provides a stage for studying novel physics and developing new functional devices. In InAs-based systems, the Fermi level is pinned in the conduction band, which makes it easy to fabricate conductive freestanding structures, such as ultrathin freestanding Hall devices and novel displacement/force sensors based on quantum mechanical transport.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1251-1254
Number of pages4
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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