InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B, and (3 1 1)B substrates

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Abstract

InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B and (3 1 1)B substrates have been studied. Quantum dots (QDs) were observed when InAs was grown on GaAs(1 0 0) (or (3 1 1)B). QDs with bimodal size distribution were formed when InAs was deposited on GaAs(2 1 1)B at lower growth temperatures (Ts) whereas quantum dashes (QDHs) were observed at higher Ts. (In,Mn)As QDs grown on GaAs(1 0 0) showed a broad range of dot sizes with irregular shape. (In,Mn)As QDs with bimodal size distribution were observed for the structure grown on GaAs(3 1 1)B. (In,Mn)As QDs grown on GaAs(2 1 1)B showed improved size uniformity compared to those grown on GaAs (1 0 0) and (3 1 1)B. The effects of Mn as a surfactant on InAs nanostructures were also studied.

Original languageEnglish
Pages (from-to)684-688
Number of pages5
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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