In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films

Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, Satoshi Yamasaki

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Dangling bond creation processes during fluorocarbon plasma etching of silicon dioxide (Si O2) films were studied using an in vacuo electron spin resonance technique. In a range of about 10 nm underneath the interface of the Si O2 films with an amorphous fluorinated carbon film that was top-covered, a Si dangling bond in the films (E′ center, g value 2.0003) was located. Density of the E′ center was sustained during etching processes created by the illumination of vacuum ultraviolet emissions, higher photon energy than the bandgap of Si O2. The etching mechanism in this system is discussed taking into account the experimental results.

Original languageEnglish
Article number264104
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number26
DOIs
Publication statusPublished - 2005 Jun 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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