Abstract
The in-plane X-ray diffractometer equipped with a vacuum evaporation apparatus was newly developed utilizing the total reflection phenomenon. The measuring system was applied to conduct an in-situ observation of the crystal growth and structural changes in the n-C33H68 molecules during an evaporation process. The results revealed that a certain amount of molecules in the as-evaporated films orient their (010) planes parallel to the surface of the SiO2 substrate. Moreover, the integrated intensity of the 110 reflection showed variation in the thickness dependence, suggesting that the molecular orientation altered as the interaction between the substrate and the adsored molecules became weaker.
Original language | English |
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Pages (from-to) | 4081-4085 |
Number of pages | 5 |
Journal | Japanese journal of applied physics |
Volume | 31 |
Issue number | 12 R |
DOIs | |
Publication status | Published - 1992 Dec |
Externally published | Yes |
Keywords
- Energy-dispersive x-ray diffraction
- Evaporation
- In-plane structure
- In-situ observation
- Molecular orientation
- N-paraffin
- Thin organic film
- Total reflection
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)