In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation

J. J. Wang, Y. Kasukabe, T. Yamamura, S. Yamamoto, Y. Fujino

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To clarify the "epitaxial" formation process of TiN films due to nitrogen-implantation, changes of crystallographic structures of as-deposited Ti films during N-implantation were studied by using a transmission electron microscope (TEM). Analysis of the results of TEM observations indicated that H atoms which constituted TiHx were completely released from as-deposited Ti films when the films were heated up to 350 °C, and that the H-released unstable fcc-Ti sublattice was transformed into hcp-structure. Ions of N2+ with 62 keV were implanted into the hcp-Ti films held at 350 °C. In the N-implanted Ti film (N/Ti=0.954), there coexisted NaCl-type TiNy and a small amount of hcp-Ti. The (001)- and (110)-oriented TiNy were "epitaxially" formed by the transformation of (03·5)- and (2̄1·0)-oriented hcp-Ti, respectively. The lattice of N-implanted hcp-Ti was expanded by the occupation of octahedral sites by N atoms. Strain due to the lattice expansion was considered as a driving force for the hcp-fcc transformation of Ti sublattice.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalThin Solid Films
Volume464-465
DOIs
Publication statusPublished - 2004 Oct 1

Keywords

  • Fcc-hcp transformation
  • In-situ TEM
  • Ion-implantation
  • TiN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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