The crystallization process of Yttria Stabilized Zirconia (YSZ) thin film and the growth process of silicon oxide (SiOx) have been directly investigated by in-situ heating TEM method from plan-view and cross-sectional directions. The YSZ layer is crystallized by the nucleation and growth mechanism. The nucleation is started from the surface region of the YSZ layer. Ultra thin SiOx layer on the surface of Si substrate plays an important role in the strain relaxation in the crystallization process.
- In-situ TEM
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Computer Science Applications
- Electrical and Electronic Engineering