IN-situ tem investigation of structural changes in zirconia/silicon heterostructures at elevated temperature

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalArticle

Abstract

The crystallization process of Yttria Stabilized Zirconia (YSZ) thin film and the growth process of silicon oxide (SiOx) have been directly investigated by in-situ heating TEM method from plan-view and cross-sectional directions. The YSZ layer is crystallized by the nucleation and growth mechanism. The nucleation is started from the surface region of the YSZ layer. Ultra thin SiOx layer on the surface of Si substrate plays an important role in the strain relaxation in the crystallization process.

Original languageEnglish
Pages (from-to)699-705
Number of pages7
JournalInternational Journal of Nanoscience
Volume3
Issue number6
DOIs
Publication statusPublished - 2004 Dec 1
Externally publishedYes

Keywords

  • Crystallization
  • In-situ TEM
  • Interface
  • Si
  • SiO
  • Strain
  • YSZ

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering

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