In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.

Original languageEnglish
Article number421
JournalNanoscale Research Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2015 Dec 1

Keywords

  • 3C-SiC
  • AR-XPS
  • Graphene
  • Ni carbide
  • Ni silicide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si'. Together they form a unique fingerprint.

  • Cite this

    Hasegawa, M., Sugawara, K., Suto, R., Sambonsuge, S., Teraoka, Y., Yoshigoe, A., Filimonov, S., Fukidome, H., & Suemitsu, M. (2015). In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si. Nanoscale Research Letters, 10(1), [421]. https://doi.org/10.1186/s11671-015-1131-9