In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO

T. Koyama, T. Onuma, S. F. Chichibu

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A report on the in situ spectral control of Zn species during helicon wave excited plasma sputtering epitaxy (HWPSE) of ZnO was presented. The emission of sputtered plumes was introduced to a monochromator through a pure quartz viewport. It was found that the ZnO film formation have certain threshold V t (around -200 V at 600 °C), and the growth rate increased with the magnitude of Vt.

Original languageEnglish
Pages (from-to)2973-2975
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number14
DOIs
Publication statusPublished - 2003 Oct 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO'. Together they form a unique fingerprint.

  • Cite this