In-situ resistivity measurement of ZnS in diamond anvil cell Under high pressure

Yong Hao Han, Ji Feng Luo, Ai Min Hao, Chun Xiao Gao, Hong Sen Xie, Sheng Chun Qu, Hong Wu Liu, Guang Tian Zou

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

Original languageEnglish
Pages (from-to)927-930
Number of pages4
JournalChinese Physics Letters
Volume22
Issue number4
DOIs
Publication statusPublished - 2005 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'In-situ resistivity measurement of ZnS in diamond anvil cell Under high pressure'. Together they form a unique fingerprint.

Cite this