In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces

H. D. Jung, N. Kumagai, Takashi Hanada, Z. Zhu, T. Yao, T. Yasuda, K. Kimura

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Nitridation processes on GaAs(001) surfaces exposed to N2 microwave plasma were investigated by in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism and its implication to GaN growth on GaAs surfaces are discussed.

Original languageEnglish
Pages (from-to)4684-4686
Number of pages3
JournalJournal of Applied Physics
Volume82
Issue number9
DOIs
Publication statusPublished - 1997 Nov 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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