In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon

Kehui Wu, X. Q. Yan, M. W. Chen

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The authors report a reversible phase transition of stress-induced amorphous silicon subjected to laser heating. In situ Raman characterization suggested that a metastable crystalline phase precipitates from the amorphous silicon upon annealing at ∼400 °C and vanishes after subsequent cooling at room temperature. The unusual reversible phase transition is most likely associated with the unique atomic structure of stress-induced amorphous silicon and high residual stresses within amorphous imprints.

Original languageEnglish
Article number101903
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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