In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon

Kehui Wu, X. Q. Yan, M. W. Chen

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    20 Citations (Scopus)

    Abstract

    The authors report a reversible phase transition of stress-induced amorphous silicon subjected to laser heating. In situ Raman characterization suggested that a metastable crystalline phase precipitates from the amorphous silicon upon annealing at ∼400 °C and vanishes after subsequent cooling at room temperature. The unusual reversible phase transition is most likely associated with the unique atomic structure of stress-induced amorphous silicon and high residual stresses within amorphous imprints.

    Original languageEnglish
    Article number101903
    JournalApplied Physics Letters
    Volume91
    Issue number10
    DOIs
    Publication statusPublished - 2007

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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