Abstract
The authors report a reversible phase transition of stress-induced amorphous silicon subjected to laser heating. In situ Raman characterization suggested that a metastable crystalline phase precipitates from the amorphous silicon upon annealing at ∼400 °C and vanishes after subsequent cooling at room temperature. The unusual reversible phase transition is most likely associated with the unique atomic structure of stress-induced amorphous silicon and high residual stresses within amorphous imprints.
Original language | English |
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Article number | 101903 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)