In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures

M. Oshima, K. Ono, M. Mizuguchi, M. Yamada, J. Okabayashi, A. Fujimori, H. Akinaga, M. Shirai

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.

Original languageEnglish
Pages (from-to)1681-1690
Number of pages10
JournalInternational Journal of Modern Physics B
Volume16
Issue number11-12
Publication statusPublished - 2002 May 20
Externally publishedYes

Keywords

  • ARPES
  • CrAs
  • Heteroepitaxy
  • Magnetic nanostructures
  • Magnetic semiconductor

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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