Abstract
High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.
| Original language | English |
|---|---|
| Pages (from-to) | 1681-1690 |
| Number of pages | 10 |
| Journal | International Journal of Modern Physics B |
| Volume | 16 |
| Issue number | 11-12 |
| Publication status | Published - 2002 May 20 |
| Externally published | Yes |
Keywords
- ARPES
- CrAs
- Heteroepitaxy
- Magnetic nanostructures
- Magnetic semiconductor
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics