In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures

M. Oshima; K. Ono; M. Mizuguchi; M. Yamada; J. Okabayashi; A. Fujimori; H. Akinaga; M. Shirai

In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures

M. Oshima, K. Ono, M. Mizuguchi, M. Yamada, J. Okabayashi, A. Fujimori, H. Akinaga, M. Shirai

Research output: Contribution to journal › Article › peer-review

Abstract

High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with T_c higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.

Original language	English
Pages (from-to)	1681-1690
Number of pages	10
Journal	International Journal of Modern Physics B
Volume	16
Issue number	11-12
Publication status	Published - 2002 May 20
Externally published	Yes

Keywords

ARPES
CrAs
Heteroepitaxy
Magnetic nanostructures
Magnetic semiconductor

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Condensed Matter Physics

Cite this

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title = "In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures",

abstract = "High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.",

keywords = "ARPES, CrAs, Heteroepitaxy, Magnetic nanostructures, Magnetic semiconductor",

author = "M. Oshima and K. Ono and M. Mizuguchi and M. Yamada and J. Okabayashi and A. Fujimori and H. Akinaga and M. Shirai",

year = "2002",

month = may,

day = "20",

language = "English",

volume = "16",

pages = "1681--1690",

journal = "International Journal of Modern Physics B",

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publisher = "World Scientific Publishing Co. Pte Ltd",

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TY - JOUR

T1 - In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures

AU - Oshima, M.

AU - Ono, K.

AU - Mizuguchi, M.

AU - Yamada, M.

AU - Okabayashi, J.

AU - Fujimori, A.

AU - Akinaga, H.

AU - Shirai, M.

PY - 2002/5/20

Y1 - 2002/5/20

N2 - High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.

AB - High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.

KW - ARPES

KW - CrAs

KW - Heteroepitaxy

KW - Magnetic nanostructures

KW - Magnetic semiconductor

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M3 - Article

AN - SCOPUS:0037141282

VL - 16

SP - 1681

EP - 1690

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

SN - 0217-9792

IS - 11-12

ER -

In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures

Abstract

Keywords

ASJC Scopus subject areas

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