In-situ observations of melt growth behavior of polycrystalline silicon

Kozo Fujiwara; Yoshikazu Obinata; Toru Ujihara; Noritaka Usami; Gen Sazaki; Kazuo Nakajima

doi:10.1016/j.jcrysgro.2003.10.075

In-situ observations of melt growth behavior of polycrystalline silicon

Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.

Original language	English
Pages (from-to)	124-129
Number of pages	6
Journal	Journal of Crystal Growth
Volume	262
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.10.075
Publication status	Published - 2004 Feb 15

Keywords

A1. In-situ observation
A1. Interfaces
B2. Polycrystalline silicon

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2003.10.075

Cite this

@article{fedd362950cd41169a898baffe37f2fb,

title = "In-situ observations of melt growth behavior of polycrystalline silicon",

abstract = "Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.",

keywords = "A1. In-situ observation, A1. Interfaces, B2. Polycrystalline silicon",

author = "Kozo Fujiwara and Yoshikazu Obinata and Toru Ujihara and Noritaka Usami and Gen Sazaki and Kazuo Nakajima",

note = "Funding Information: The authors would like to acknowledge Professor R. Shimokawa for valuable discussions. This study was partially supported by SOG-Si Technology Research Association (SOGA) and NEDO.",

year = "2004",

month = feb,

day = "15",

doi = "10.1016/j.jcrysgro.2003.10.075",

language = "English",

volume = "262",

pages = "124--129",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - In-situ observations of melt growth behavior of polycrystalline silicon

AU - Fujiwara, Kozo

AU - Obinata, Yoshikazu

AU - Ujihara, Toru

AU - Usami, Noritaka

AU - Sazaki, Gen

AU - Nakajima, Kazuo

N1 - Funding Information: The authors would like to acknowledge Professor R. Shimokawa for valuable discussions. This study was partially supported by SOG-Si Technology Research Association (SOGA) and NEDO.

PY - 2004/2/15

Y1 - 2004/2/15

N2 - Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.

AB - Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.

KW - A1. In-situ observation

KW - A1. Interfaces

KW - B2. Polycrystalline silicon

UR - http://www.scopus.com/inward/record.url?scp=0842344378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842344378&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2003.10.075

DO - 10.1016/j.jcrysgro.2003.10.075

M3 - Article

AN - SCOPUS:0842344378

SN - 0022-0248

VL - 262

SP - 124

EP - 129

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

In-situ observations of melt growth behavior of polycrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this