In-situ observations of melt growth behavior of polycrystalline silicon

Kozo Fujiwara; Yoshikazu Obinata; Toru Ujihara; Noritaka Usami; Gen Sazaki; Kazuo Nakajima

doi:10.1016/j.jcrysgro.2003.10.075

In-situ observations of melt growth behavior of polycrystalline silicon

Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.

Original language	English
Pages (from-to)	124-129
Number of pages	6
Journal	Journal of Crystal Growth
Volume	262
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.10.075
Publication status	Published - 2004 Feb 15

Keywords

A1. In-situ observation
A1. Interfaces
B2. Polycrystalline silicon

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.",

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AU - Fujiwara, Kozo

AU - Obinata, Yoshikazu

AU - Ujihara, Toru

AU - Usami, Noritaka

AU - Sazaki, Gen

AU - Nakajima, Kazuo

PY - 2004/2/15

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AB - Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.

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KW - A1. Interfaces

KW - B2. Polycrystalline silicon

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