TY - JOUR
T1 - In-situ observations of melt growth behavior of polycrystalline silicon
AU - Fujiwara, Kozo
AU - Obinata, Yoshikazu
AU - Ujihara, Toru
AU - Usami, Noritaka
AU - Sazaki, Gen
AU - Nakajima, Kazuo
N1 - Funding Information:
The authors would like to acknowledge Professor R. Shimokawa for valuable discussions. This study was partially supported by SOG-Si Technology Research Association (SOGA) and NEDO.
PY - 2004/2/15
Y1 - 2004/2/15
N2 - Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.
AB - Melt growth behavior of polycrystalline silicon was observed using a newly developed in-situ monitoring system consisting of a furnace and a microscope. It is possible to perform a directional growth from seed crystal or crucible wall and to observe the growth interface by using this system. Differences of growth rate or interfacial morphology among each grain of polycrystalline silicon were observed during melt growth. The Mullins-Sekerka instability of growth interface was also observed in a silicon melt for the first time. This observation system is confirmed to become a useful tool for revealing the growth mechanism of polycrystalline silicon.
KW - A1. In-situ observation
KW - A1. Interfaces
KW - B2. Polycrystalline silicon
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U2 - 10.1016/j.jcrysgro.2003.10.075
DO - 10.1016/j.jcrysgro.2003.10.075
M3 - Article
AN - SCOPUS:0842344378
SN - 0022-0248
VL - 262
SP - 124
EP - 129
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -