Abstract
Spherical Si single crystals for solar cell substrates have been grown successfully with a yield of almost 100%. Spherical Si multicrystals with diameters of approximately 400 μm in a teardrop shape were initially fabricated by a dropping method. The as-dropped spherical Si multicrystals were melted into droplets on a silica plate in an oxygen atmosphere, and the Si droplets were then recrystallized to form single crystals by supercooling within a specific temperature range. It was found that the recrystallization process occurred unidirectionally in each Si droplet, and recrystallized spherical Si single crystals free of defects (dislocations and oxidation-induced stacking faults, OSF) were obtained at a supercooling in the range of 12-42 °C. For supercooling ranging from 42 to 87 °C, spherical Si single crystals could still be obtained; however, many defects such as dislocations and OSF were generated. When the supercooling was larger than 87 °C, the crystal growth showed a dendritic growth mode and only multicrystals were obtained.
Original language | English |
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Pages (from-to) | 341-347 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 307 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Sep 15 |
Keywords
- A1. Supercooling
- A2. Single crystal growth
- B1. Spherical Si crystal
- B3. Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry