In situ observations of crystal growth behavior of silicon melt

Kozo Fujiwara, Keiji Nakajima, Toru Ujihara, Noritaka Usami, Gen Sazaki, Hajime Hasegawa, Shozo Mizoguchi, Kazuo Nakajima

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Crystal growth behavior of silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of the growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown the (1 1 1) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 °. The growth behavior of silicon melt was explained by an analytical expression based on a two-dimensional nucleation model.

Original languageEnglish
Pages (from-to)275-282
Number of pages8
JournalJournal of Crystal Growth
Volume243
Issue number2
DOIs
Publication statusPublished - 2002 Aug 1

Keywords

  • A1. Confocal scanning laser microscope
  • A1. Facet interface
  • A1. In situ observation
  • A1. Planar interface
  • A1. Undercooling
  • A2. Growth from melt
  • B1. Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Fujiwara, K., Nakajima, K., Ujihara, T., Usami, N., Sazaki, G., Hasegawa, H., Mizoguchi, S., & Nakajima, K. (2002). In situ observations of crystal growth behavior of silicon melt. Journal of Crystal Growth, 243(2), 275-282. https://doi.org/10.1016/S0022-0248(02)01521-X