In-plane optical anisotropy induced by biaxial strain of pseudomorphic ZnSxSe1-x layers grown on GaAs(110) is observed around the band-gap energy by reflectance difference spectroscopy (RDS). The evolution of the strain-induced peaks with increasing film thickness is analyzed by the three-phase (substrate-overlayer-ambient) model. The magnitude and shape of the peaks are, respectively, correlated with the strain and the film thickness. Dielectric-function anisotropies of the pseudomorphic overlayers are obtained using a decomposition method of RD spectra and their imaginary part have a sharp peak at fundamental-gap energy.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics