In situ observation of strain-induced optical anisotropy of ZnSxSe1-x/GaAs(110) during molecular-beam epitaxy

Takashi Hanada, Tetsuji Yasuda, Akihiro Ohtake, Kurt Hingerl, Shiro Miwa, Kenta Arai, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In-plane optical anisotropy induced by biaxial strain of pseudomorphic ZnSxSe1-x layers grown on GaAs(110) is observed around the band-gap energy by reflectance difference spectroscopy (RDS). The evolution of the strain-induced peaks with increasing film thickness is analyzed by the three-phase (substrate-overlayer-ambient) model. The magnitude and shape of the peaks are, respectively, correlated with the strain and the film thickness. Dielectric-function anisotropies of the pseudomorphic overlayers are obtained using a decomposition method of RD spectra and their imaginary part have a sharp peak at fundamental-gap energy.

Original languageEnglish
Pages (from-to)8909-8914
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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