In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

Kozo Fujiwara, Kensaku Maeda, Noritaka Usami, Gen Sazaki, Yoshitaro Nose, Akiko Nomura, Toetsu Shishido, Kazuo Nakajima

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling for growing a faceted dendrite was experimentally determined to be ΔT = 10 K. We also confirmed that parallel twins associated with faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin formation was explained in terms of a model of twin formation on the {1 1 1} facet plane at the growth interface.

Original languageEnglish
Pages (from-to)2663-2668
Number of pages6
JournalActa Materialia
Volume56
Issue number11
DOIs
Publication statusPublished - 2008 Jun 1

Keywords

  • Faceted dendrite
  • Silicon
  • Solid/liquid interface
  • Twin boundary
  • Undercooling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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