In situ observation of oxygen gettering by titanium overlayer on Hf O2 Si O2 Si using high-resolution Rutherford backscattering spectroscopy

Kaoru Nakajima, Akira Fujiyoshi, Zhao Ming, Motofumi Suzuki, Kenji Kimura

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14 Citations (Scopus)

Abstract

Oxygen gettering by Ti overlayer (2-8 nm) on a Hf O2 (3 nm) Si O2 (1.5 nm) Si (001) structure was investigated using high-resolution Rutherford backscattering spectroscopy. After deposition of a thin Ti layer, the interfacial Si O2 layer is reduced by ∼0.2 nm and the released oxygen is incorporated in Ti layer. Subsequent annealing at 330 °C in UHV causes further reduction by 0.1-0.8 nm depending on the Ti layer thickness. In addition to the reduction of the Si O2 layer, significant oxygen depletion in the Hf O2 layer was observed for thicker Ti layers after annealing.

Original languageEnglish
Article number064507
JournalJournal of Applied Physics
Volume102
Issue number6
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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