In situ observation of oxide films formed during thermal oxidation of SiC-B4C composite using Raman spectroscopy

T. Narushima, M. Maruyama, H. Arashi, T. Goto, T. Hirai, Y. Iguchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Oxidation behaviour of SiC-B4C composites at 1073 K was investigated by laser Raman spectroscopy. In situ Raman spectra of the surface of the composite indicated the formation of carbon and borosilicate as oxidation products. The carbon was enriched in the part of borosilicate closer to the oxide/composite interface using a micro-Raman spectroscopic system. The oxidation resistance of the composites was improved with increasing SiC content.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalKey Engineering Materials
Volume113
Publication statusPublished - 1996 Jan 1

Keywords

  • Boron Carbide
  • In Situ Observation
  • Oxidation
  • Raman Spectroscopy
  • Silicon Carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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