Engineering
Implantation
85%
Face-Centered Cubic
42%
Sublattice
42%
Heating
42%
Room Temperature
28%
Energy Dissipation
28%
Valence Band
28%
Molecular Orbital
28%
Loss Peak
28%
Transmissions
28%
Plasmon Excitation
28%
Thin Films
14%
Situ Observation
14%
Deposited Film
14%
Growth Process
14%
Fermi Level
14%
Nitriding
14%
Atomic Arrangement
14%
Preferred Orientation
14%
Nitriding Process
14%
Temperature
14%
Substrates
14%
Mechanisms
14%
High Energy
14%
Lower Energy
14%
Maximum Concentration
14%
Chemistry
Atom
71%
Molecular Orbital
57%
Electron Energy Loss Spectroscopy
57%
Face-Centered Cubic Crystal System
42%
Heating
42%
Electronic State
28%
Valence Band
28%
Electron Density
28%
Chemical Transformation
28%
Ambient Reaction Temperature
28%
Calcium Fluoride
14%
Crystal Structure
14%
Hydrogen Atom
14%
Fermi Level
14%
Rutherford Backscattering Spectroscopy
14%
Ion Implantation
14%
Reaction Temperature
14%
Concentration
14%
Dose
14%
Ligand
14%
Physics
Implantation
85%
Atoms
71%
Subgroups
42%
Heating
42%
Room Temperature
28%
Electron Density
28%
Electronic Structure
28%
Calculation
28%
Sides
28%
Thin Films
14%
Crystal Structure
14%
Ion Implantation
14%
Nitriding
14%
Temperature
14%
Sites
14%
Substrates
14%
Ratios
14%
Biochemistry, Genetics and Molecular Biology
Atom
85%
Energy
57%
Electron Energy Loss Spectrometry
57%
Heating
42%
Electron
28%
Room Temperature
28%
Density
28%
Maximum Concentration
14%
Inorganic Ion
14%
Growth
14%
Temperature
14%
Dose
14%
Rutherford Backscattering Spectrometry
14%
Material Science
Film
100%
Carrier Concentration
28%
Thin Films
14%