In situ observation of interaction between grain boundaries during directional solidification of Si

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Abstract

The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

Original languageEnglish
Pages (from-to)37-41
Number of pages5
JournalScripta Materialia
Volume148
DOIs
Publication statusPublished - 2018 Apr 15

Keywords

  • Directional solidification
  • Grain boundary
  • Multicrystalline Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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