Abstract
The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.
Original language | English |
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Pages (from-to) | 37-41 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 148 |
DOIs | |
Publication status | Published - 2018 Apr 15 |
Keywords
- Directional solidification
- Grain boundary
- Multicrystalline Si
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys