In situ observation of interaction between grain boundaries during directional solidification of Si

Lu Chung Chuang; Kensaku Maeda; Haruhiko Morito; Keiji Shiga; Wolfram Miller; Kozo Fujiwara

doi:10.1016/j.scriptamat.2018.01.020

In situ observation of interaction between grain boundaries during directional solidification of Si

Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

Original language	English
Pages (from-to)	37-41
Number of pages	5
Journal	Scripta Materialia
Volume	148
DOIs	https://doi.org/10.1016/j.scriptamat.2018.01.020
Publication status	Published - 2018 Apr 15

Keywords

Directional solidification
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2018.01.020

Cite this

@article{03c455536e2742eaa1ec5a2bd6f05c98,

title = "In situ observation of interaction between grain boundaries during directional solidification of Si",

abstract = "The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.",

keywords = "Directional solidification, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Kensaku Maeda and Haruhiko Morito and Keiji Shiga and Wolfram Miller and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2018 Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2018",

month = apr,

day = "15",

doi = "10.1016/j.scriptamat.2018.01.020",

language = "English",

volume = "148",

pages = "37--41",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - In situ observation of interaction between grain boundaries during directional solidification of Si

AU - Chuang, Lu Chung

AU - Maeda, Kensaku

AU - Morito, Haruhiko

AU - Shiga, Keiji

AU - Miller, Wolfram

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2018 Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/4/15

Y1 - 2018/4/15

N2 - The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

AB - The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

KW - Directional solidification

KW - Grain boundary

KW - Multicrystalline Si

UR - http://www.scopus.com/inward/record.url?scp=85041479002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041479002&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2018.01.020

DO - 10.1016/j.scriptamat.2018.01.020

M3 - Article

AN - SCOPUS:85041479002

VL - 148

SP - 37

EP - 41

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

In situ observation of interaction between grain boundaries during directional solidification of Si

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this