In situ observation of interaction between grain boundaries during directional solidification of Si

Lu Chung Chuang; Kensaku Maeda; Haruhiko Morito; Keiji Shiga; Wolfram Miller; Kozo Fujiwara

doi:10.1016/j.scriptamat.2018.01.020

In situ observation of interaction between grain boundaries during directional solidification of Si

Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

Original language	English
Pages (from-to)	37-41
Number of pages	5
Journal	Scripta Materialia
Volume	148
DOIs	https://doi.org/10.1016/j.scriptamat.2018.01.020
Publication status	Published - 2018 Apr 15

Keywords

Directional solidification
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2018.01.020

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title = "In situ observation of interaction between grain boundaries during directional solidification of Si",

abstract = "The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.",

keywords = "Directional solidification, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Kensaku Maeda and Haruhiko Morito and Keiji Shiga and Wolfram Miller and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2018 Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2018",

month = apr,

day = "15",

doi = "10.1016/j.scriptamat.2018.01.020",

language = "English",

volume = "148",

pages = "37--41",

journal = "Scripta Materialia",

issn = "1359-6462",

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TY - JOUR

T1 - In situ observation of interaction between grain boundaries during directional solidification of Si

AU - Chuang, Lu Chung

AU - Maeda, Kensaku

AU - Morito, Haruhiko

AU - Shiga, Keiji

AU - Miller, Wolfram

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2018 Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/4/15

Y1 - 2018/4/15

N2 - The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

AB - The interaction between grain boundaries (GBs) at a silicon crystal/melt interface was studied using in situ observations during directional solidification. Two small-angle GBs (SAGBs) interact with each other to produce a new SAGB with increased misorientaion. However, the interaction between Σ3 GBs and SAGBs reveals a different phenomenon. The extending directions and misorientations of the SAGBs and Σ3 GBs show no change before and after the convergence of these two planar defects at the crystal/melt interface.

KW - Directional solidification

KW - Grain boundary

KW - Multicrystalline Si

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UR - http://www.scopus.com/inward/citedby.url?scp=85041479002&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2018.01.020

DO - 10.1016/j.scriptamat.2018.01.020

M3 - Article

AN - SCOPUS:85041479002

VL - 148

SP - 37

EP - 41

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

In situ observation of interaction between grain boundaries during directional solidification of Si

Abstract

Keywords

ASJC Scopus subject areas

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