In-situ observation of formation processes of anodic porous alumina on a Si substrate using infrared absorption spectroscopy

Yasuo Kimura, Hirokazu Shiraki, Hisao Ishii, Sachiko Ono, Kingo Itaya, Michio Niwano

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated formation processes of a porous anodic alumina film on a p-type silicon (Si) substrate using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We observed drastic IR spectral changes when porous anodic alumina film approached interfaces between an aluminum (Al) layer and a Si substrate. The intensity of the IR absorption peaks due to water (H2O) molecules and silicon oxides (SiO 2) increased simultaneously with a spike of anodic current density. The IR spectral changes indicated that the penetration of electrolytes brought about inhomogeneous oxidation of a Si substrate surface. We observed that the arrangement of the SiO2 nanodots closely reflected that of pores of a porous anodic alumina film. IR absorption peaks due to porous anodic alumina finally disappeared. The formation of SiO2 nanodots on a Si substrate promoted penetration of electrolytes to peel the porous anodic alumina film off it.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume788
Publication statusPublished - 2003 Dec 1
EventContinuous Nanophase and Nanostructured Materials - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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