In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy

Toyokazu Hori, Hitoshi Sakamoto, Yuji Takakuwa, Yoshiharu Enta, Hiroo Kato, Nobuo Miyamoto

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2 Citations (Scopus)

Abstract

In situ observation by photoelectron spectroscopy using synchrotron radiation was performed to investigate the species and coverage of surface adsorbates while exposing the high-temperature Si(001) surface to SiH2Cl2 atmosphere. Photoelectron spectra of valence bands made it possible to evaluate the clean surface area with dimer dangling bonds (Si-db). Curve-fitting analysis of Si 2p spectra showed that the chlorine adsorption species is only monochloride (Si-Cl) in the whole temperature region from room temperature to ∼ 700°C examined. From comparison between the surface coverages of Si-db and Si-Cl in connection with the 2 × 1 structure of the SiH2Cl2-adsorbed Si(001) surface as observed by reflection high energy electron diffraction, we assigned the hydrogen adsorption state to be dominantly monohydride (Si-H). The temperature dependencies of the surface coverages obtained for Si-Cl, Si-H and Si-db are discussed using a surface reaction model of SiH2Cl2 adsorption.

Original languageEnglish
Pages (from-to)354-360
Number of pages7
JournalThin Solid Films
Volume343-344
Issue number1-2
DOIs
Publication statusPublished - 1999 Jan 1

Keywords

  • Adsorption
  • Desorption
  • In situ observation
  • Photoelectron spectroscopy
  • Si(001)
  • SiHCl
  • Synchrotron radiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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