In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (PTMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher P TMIN is necessary. On the other hand, smaller PTMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate PTMIn during the InAs growth: PTMIn should be decreased as soon as the initial nucleation occurs.

Original languageEnglish
Title of host publicationECS Transactions - EuroCVD 17/CVD 17
Pages521-524
Number of pages4
Edition8 PART 1
DOIs
Publication statusPublished - 2009 Dec 1
Event17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number8 PART 1
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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