In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

M. Deura; Y. Kondo; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

doi:10.1149/1.3207634

In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (P_TMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher P _TMIN is necessary. On the other hand, smaller P_TMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate P_TMIn during the InAs growth: P_TMIn should be decreased as soon as the initial nucleation occurs.

Original language	English
Title of host publication	ECS Transactions - EuroCVD 17/CVD 17
Pages	521-524
Number of pages	4
Edition	8 PART 1
DOIs	https://doi.org/10.1149/1.3207634
Publication status	Published - 2009 Dec 1
Event	17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 4 → 2009 Oct 9

Publication series

Name	ECS Transactions
Number	8 PART 1
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Country	Austria
City	Vienna
Period	09/10/4 → 09/10/9

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3207634

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In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si. / Deura, M.; Kondo, Y.; Hoshii, T.; Takenaka, M.; Takagi, S.; Nakano, Y.; Sugiyama, M.

ECS Transactions - EuroCVD 17/CVD 17. 8 PART 1. ed. 2009. p. 521-524 (ECS Transactions; Vol. 25, No. 8 PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Deura, M, Kondo, Y, Hoshii, T, Takenaka, M, Takagi, S, Nakano, Y & Sugiyama, M 2009, In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si. in ECS Transactions - EuroCVD 17/CVD 17. 8 PART 1 edn, ECS Transactions, no. 8 PART 1, vol. 25, pp. 521-524, 17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/4. https://doi.org/10.1149/1.3207634

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AU - Deura, M.

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AU - Hoshii, T.

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AU - Takagi, S.

AU - Nakano, Y.

AU - Sugiyama, M.

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AB - InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (PTMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher P TMIN is necessary. On the other hand, smaller PTMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate PTMIn during the InAs growth: PTMIn should be decreased as soon as the initial nucleation occurs.

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