TY - GEN
T1 - In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si
AU - Deura, M.
AU - Kondo, Y.
AU - Hoshii, T.
AU - Takenaka, M.
AU - Takagi, S.
AU - Nakano, Y.
AU - Sugiyama, M.
PY - 2009
Y1 - 2009
N2 - InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (PTMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher P TMIN is necessary. On the other hand, smaller PTMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate PTMIn during the InAs growth: PTMIn should be decreased as soon as the initial nucleation occurs.
AB - InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (PTMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher P TMIN is necessary. On the other hand, smaller PTMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate PTMIn during the InAs growth: PTMIn should be decreased as soon as the initial nucleation occurs.
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U2 - 10.1149/1.3207634
DO - 10.1149/1.3207634
M3 - Conference contribution
AN - SCOPUS:76549101000
SN - 9781566777452
T3 - ECS Transactions
SP - 521
EP - 524
BT - ECS Transactions - EuroCVD 17/CVD 17
T2 - 17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Y2 - 4 October 2009 through 9 October 2009
ER -