In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.

Original languageEnglish
Title of host publication1999 International Microprocesses and Nanotechnology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages170-171
Number of pages2
ISBN (Electronic)4930813972, 9784930813978
DOIs
Publication statusPublished - 1999 Jan 1
Event1999 International Microprocesses and Nanotechnology Conference - Yokohama, Japan
Duration: 1999 Jul 61999 Jul 8

Publication series

Name1999 International Microprocesses and Nanotechnology Conference

Other

Other1999 International Microprocesses and Nanotechnology Conference
Country/TerritoryJapan
CityYokohama
Period99/7/699/7/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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