TY - JOUR
T1 - In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)
AU - Kumagai, N.
AU - Yasuda, T.
AU - Hanada, T.
AU - Yao, T.
N1 - Funding Information:
This study was supported in part by a Grant-in-Aid from the Ministry of Science, Culture, Sports and Education (Japanese Society of Promotion of Science) and the Visiting Researcher's Program of the Institute for Materials Research, Tohoku University.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.
AB - We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0033686927&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033686927&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00149-4
DO - 10.1016/S0022-0248(00)00149-4
M3 - Conference article
AN - SCOPUS:0033686927
VL - 214
SP - 547
EP - 551
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -