In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)

N. Kumagai, T. Yasuda, Takashi Hanada, T. Yao

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.

Original languageEnglish
Pages (from-to)547-551
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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