Abstract
We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.
Original language | English |
---|---|
Pages (from-to) | 547-551 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 214 |
DOIs | |
Publication status | Published - 2000 Jun 2 |
Event | The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry