In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)

N. Kumagai; T. Yasuda; Takashi Hanada; T. Yao

doi:10.1016/S0022-0248(00)00149-4

In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)

N. Kumagai, T. Yasuda, Takashi Hanada, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E₁ and E₁ + Δ₁ transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.

Original language	English
Pages (from-to)	547-551
Number of pages	5
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00149-4
Publication status	Published - 2000 Jun 2
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(00)00149-4

Fingerprint Dive into the research topics of 'In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)'. Together they form a unique fingerprint.

Cite this

@article{ee5984f2923c4314953bb0d10733f593,

title = "In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)",

abstract = "We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.",

author = "N. Kumagai and T. Yasuda and Takashi Hanada and T. Yao",

year = "2000",

month = jun,

day = "2",

doi = "10.1016/S0022-0248(00)00149-4",

language = "English",

volume = "214",

pages = "547--551",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

}

TY - JOUR

T1 - In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)

AU - Kumagai, N.

AU - Yasuda, T.

AU - Hanada, Takashi

AU - Yao, T.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.

AB - We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E1 and E1 + Δ1 transition energy and the carrier concentration determined from ex situ capacitance-voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033686927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033686927&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00149-4

DO - 10.1016/S0022-0248(00)00149-4

M3 - Conference article

AN - SCOPUS:0033686927

VL - 214

SP - 547

EP - 551

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

In situ measurement of carrier concentration in n-ZnSe by Reflectance Difference Spectroscopy (RDS)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this