In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

Yuichi Ohsawa; Kiyoshi Yamakawa; Hiroaki Muraoka

doi:10.1063/1.3556927

In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

Yuichi Ohsawa, Kiyoshi Yamakawa, Hiroaki Muraoka

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe₇₀Co₃₀ film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (T_cr). The T_cr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T _cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.

Original language	English
Article number	07B736
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3556927
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3556927

Cite this

@article{9e36f5bdbdb9499dab205a8277652c5c,

title = "In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films",

abstract = "The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe70Co30 film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (Tcr). The Tcr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.",

author = "Yuichi Ohsawa and Kiyoshi Yamakawa and Hiroaki Muraoka",

note = "Funding Information: This work was supported in part by the Research and Development for Next-Generation Information Technology program of the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) and partly carried out at the Evaluation and Analysis Center, RIEC, Tohoku University.",

year = "2011",

month = apr,

day = "1",

doi = "10.1063/1.3556927",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

AU - Ohsawa, Yuichi

AU - Yamakawa, Kiyoshi

AU - Muraoka, Hiroaki

N1 - Funding Information: This work was supported in part by the Research and Development for Next-Generation Information Technology program of the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) and partly carried out at the Evaluation and Analysis Center, RIEC, Tohoku University.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe70Co30 film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (Tcr). The Tcr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.

AB - The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe70Co30 film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (Tcr). The Tcr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.

UR - http://www.scopus.com/inward/record.url?scp=79955424207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955424207&partnerID=8YFLogxK

U2 - 10.1063/1.3556927

DO - 10.1063/1.3556927

M3 - Article

AN - SCOPUS:79955424207

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07B736

ER -

In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this