In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

Yuichi Ohsawa; Kiyoshi Yamakawa; Hiroaki Muraoka

doi:10.1063/1.3556927

In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films

Yuichi Ohsawa, Kiyoshi Yamakawa, Hiroaki Muraoka

Broadband Engineering Division

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe₇₀Co₃₀ film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (T_cr). The T_cr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T _cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.

Original language	English
Article number	07B736
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3556927
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "In situ magnetoresistance measurements of ion-beam-etched Fe-Co thin films",

abstract = "The effect of ion-beam (IB) irradiation on magnetic softness in Fe-Co thin films was evaluated by means of in situ magnetoresistance (MR) measurements. A 25 nm Fe70Co30 film was etched by Ar IB, and successive MR measurements were performed in the same IB etching chamber. Since the IB etching and MR measurements were performed alternately in vacuum, it was possible to evaluate the etching effect on magnetic softness of the single sample without any capping layer interaction. We name the thickness below which the magnetic softness of the etched film starts to decrease as the critical thickness (Tcr). The Tcr was found to be affected by IB energy: 150 and 250 V IB, respectively, showed 7.5 and 10 nm smaller T cr than that of 600 V IB. Structural analysis revealed the 600 V IB introduced a larger deterioration in the film crystallinity than with the 250 V IB.",

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