In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon

Toshimasa Wadayama, Yoshihisa Maiwa, Hironobu Shibata, Aritada Hatta

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in situ with polarization modulation IR spectroscopy. Below 473 K, the absorption bands due to SiHs species incorporated in the a-Si:H completely disappear upon exposure to DMAH under UV illumination while those due to SiH2 species remain nearly unchanged. The intensity reduction of the SiH2 absorption bands is observed above 473 K. These spectral changes are observed only in early stages of DMAH exposure. These results suggest that DMAH reacts with SiH2 species present on the topmost surface of the a-Si:H film.

Original languageEnglish
Pages (from-to)L779-L781
JournalJapanese journal of applied physics
Volume34
Issue number6
DOIs
Publication statusPublished - 1995 Jun 1

Keywords

  • Aluminum
  • Amorphous silicon
  • Dimethylaluminum hydride
  • MO-CVD
  • PM-IR

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon'. Together they form a unique fingerprint.

  • Cite this