In Situ IR Spectroscopic Observation of a-Si:H(F) Films Growing under Spontaneous Chemical Deposition Method

Toshimasa Wadayama, Hideki Kayama, Aritada Hatta, Wataru Suëtaka, Jun ichi Hanna

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Polarization modulation infrared spectroscopy has been applied to in situ observation of a-Si:H(F) films deposited by the spontaneous chemical deposition (SCD) method. The film showed multiple IR absorption bands due to the formation of various hydrogenated and fluorinated silicon species. These bands increased in intensity with deposition time, although the rates of intensity increase of the bands were different from each other. The absorption intensity change of these bands with the deposition time suggests that the predominant species in the initial stage of the deposition is fluorinated silicon. The exposure to air of the film deposited at a low substrate temperature resulted in the remarkable intensity decrease of the bands due to fluorinated silicon, accompanying the appearance of the Si–O stretching band.

Original languageEnglish
Pages (from-to)1884-1888
Number of pages5
JournalJapanese journal of applied physics
Volume29
Issue number10
DOIs
Publication statusPublished - 1990 Oct

Keywords

  • A-Si:H(F)
  • Fluorinated silicon
  • Hydrogenated silicon
  • Insitu IR observation
  • Polarization modulation IR spectroscopy
  • Spontaneous chemical deposition method

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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