In situ IR spectral study of the reaction of a-Si:H:F films with dimethylaluminum hydride

Toshimasa Wadayama, Yoshihisa Maiwa, Aritada Hatta

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1 Citation (Scopus)

Abstract

The reaction of dimethylaluminum hydride (DMAH) with a-Si:H:F films prepared by spontaneous chemical vapor deposition (SCVD) has been studied in situ using polarization modulation IR spectroscopy. It is found that SCVD films before DMAH exposure contain SiF2, SiH2F, and SiH2 species. Upon exposure to DMAH at a temperature ranging from 373 to 593 K, the IR bands due to SiF2 and SiH2F stretch vibrations decrease in intensity, whereas the intensity of the SiH2 stretch band increases. These changes are remarkable at high temperature; in particular the SiH2 stretch band shifts to lower wavenumber with increasing exposure temperature. These results suggest that DMAH reacts with the SiF2 and SiH2F species to form SiH2 and SiH2. We also reveal a temperature dependent correlation between the spectral changes and the deposited amounts of Al, as determined by induced coupled plasma analysis.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalVibrational Spectroscopy
Volume13
Issue number1
DOIs
Publication statusPublished - 1996 Dec

Keywords

  • Aluminum
  • Amorphous silicon
  • Dimethylaluminum hydride
  • MOCVD
  • Polarization modulation
  • Reflection absorption

ASJC Scopus subject areas

  • Spectroscopy

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