In situ IR observation of photo-chemically deposited silicon nitride thin films

T. Wadayama, T. Hihara, A. Hatta, W. Suëtaka

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Polarization modulation IR spectroscopy has been applied to the in situ observation of the growth process of photo-CVD silicon nitride thin films. Two bands ascribable to vSiN modes were observed. In the initial stage of the deposition, a band appeared at 965 cm-1, whose intensity was nearly unchanged during the deposition. As the film was deposited further, a new band emerged around 1030 cm-1 which grew rapidly, dominating the spectrum. Upon UV irradiation in vacuum, the 965 cm-1 and vSiN band decreased in intensity, while the band at 1030 cm-1 increased. Similar behavior of the above-mentioned bands was observed upon admission of F2 into the cell. These results suggest the presence of a metastable surface layer, which converts into a stable network of silicon nitride.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalApplied Surface Science
Volume48-49
Issue numberC
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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