TY - JOUR
T1 - In situ IR observation of photo-chemically deposited silicon nitride thin films
AU - Wadayama, T.
AU - Hihara, T.
AU - Hatta, A.
AU - Suëtaka, W.
N1 - Funding Information:
One of the authors (T.W.) expresses his cordial thanks to lzumi Science and Technology Foundation for financial support of this presentation.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991
Y1 - 1991
N2 - Polarization modulation IR spectroscopy has been applied to the in situ observation of the growth process of photo-CVD silicon nitride thin films. Two bands ascribable to vSiN modes were observed. In the initial stage of the deposition, a band appeared at 965 cm-1, whose intensity was nearly unchanged during the deposition. As the film was deposited further, a new band emerged around 1030 cm-1 which grew rapidly, dominating the spectrum. Upon UV irradiation in vacuum, the 965 cm-1 and vSiN band decreased in intensity, while the band at 1030 cm-1 increased. Similar behavior of the above-mentioned bands was observed upon admission of F2 into the cell. These results suggest the presence of a metastable surface layer, which converts into a stable network of silicon nitride.
AB - Polarization modulation IR spectroscopy has been applied to the in situ observation of the growth process of photo-CVD silicon nitride thin films. Two bands ascribable to vSiN modes were observed. In the initial stage of the deposition, a band appeared at 965 cm-1, whose intensity was nearly unchanged during the deposition. As the film was deposited further, a new band emerged around 1030 cm-1 which grew rapidly, dominating the spectrum. Upon UV irradiation in vacuum, the 965 cm-1 and vSiN band decreased in intensity, while the band at 1030 cm-1 increased. Similar behavior of the above-mentioned bands was observed upon admission of F2 into the cell. These results suggest the presence of a metastable surface layer, which converts into a stable network of silicon nitride.
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U2 - 10.1016/0169-4332(91)90365-Q
DO - 10.1016/0169-4332(91)90365-Q
M3 - Article
AN - SCOPUS:0026155453
VL - 48-49
SP - 409
EP - 413
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -