In-situ IR observation of etching and oxidation processes of Si surfaces

Michio Niwano

Research output: Contribution to journalConference articlepeer-review

46 Citations (Scopus)

Abstract

We have used infra-red absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry to investigate in-situ and real-time etching and oxidation processes on Si surfaces. IRAS-MIR, with its high surface sensitivity and energy resolution, is particularly suitable for investigating the atomic bonding configuration of hydrogen in the vicinity of the surface. We present the experimental results on (1) etching of Si(100) by atomic hydrogen, (2) oxidation of Si(100) by the water molecule, (3) hydrogen exchange reaction on Si surface in water and (4) oxidation of Si surface in water. IR data show that hydrogen plays an important role in the etching and oxidation processes on Si surfaces, and that MIR-IR is a powerful tool for the atomic-scale investigation of chemical processes on Si surfaces.

Original languageEnglish
Pages (from-to)199-207
Number of pages9
JournalSurface Science
Volume427-428
DOIs
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 9th International Conference on Vibrations at Surfaces (VAS9) - Kanagawa-ken, Jpn
Duration: 1998 Oct 121998 Oct 16

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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