TY - JOUR
T1 - In-situ IR and mass spectroscopic study of the Al(CH 3 ) 2 H/a-Si:H reaction processes
AU - Wadayama, T.
AU - Maiwa, Y.
AU - Shibata, H.
AU - Hatta, A.
N1 - Funding Information:
One of the authors (T.W.) expressesh is cordial thanks to Izumi Science and Technology Foundation for a financial support of this work. This work was partly supportedb y a Grant-in-Aid (No. 0675071 2) ministry of Education, Science and Culture of Japan.
PY - 1996/7
Y1 - 1996/7
N2 - The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in-situ with polarization modulation IR and quadruple mass spectroscopy. Under UV illumination, IR absorption bands due to hydrogenated silicon species incorporated in the a-Si:H decrease in intensity upon exposure to DMAH at 323-593 K. Between 323 and 473 K, the bands due to SiH 3 species completely disappear by the exposure of DMAH while those of SiH 2 species remain nearly unchanged. The intensities of the SiH 2 bands begin to decrease above 473 K. These spectral changes caused by DMAH exposure are observed only in the early stages with marked evolution of H 2 and CH 4 . These results suggest that DMAH reacts with SiH 3 species at the outermost surface of the a-Si:H.
AB - The reaction of dimethylaluminum hydride (DMAH) with photochemically deposited hydrogenated amorphous silicon (a-Si:H) has been studied in-situ with polarization modulation IR and quadruple mass spectroscopy. Under UV illumination, IR absorption bands due to hydrogenated silicon species incorporated in the a-Si:H decrease in intensity upon exposure to DMAH at 323-593 K. Between 323 and 473 K, the bands due to SiH 3 species completely disappear by the exposure of DMAH while those of SiH 2 species remain nearly unchanged. The intensities of the SiH 2 bands begin to decrease above 473 K. These spectral changes caused by DMAH exposure are observed only in the early stages with marked evolution of H 2 and CH 4 . These results suggest that DMAH reacts with SiH 3 species at the outermost surface of the a-Si:H.
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U2 - 10.1016/0169-4332(96)00341-8
DO - 10.1016/0169-4332(96)00341-8
M3 - Article
AN - SCOPUS:0030564433
VL - 100-101
SP - 575
EP - 578
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -