Solution growth is a promising process to obtain high-quality 4H-SiC crystal for application in high-voltage-power devices. Polytype transition from 4H-SiC into 6H-, 15R-, or 3C-SiC is one of the major issues to be solved to achieve rapid growth of large-diameter 4H-SiC crystals. In this study, the mechanism for the polytype transition to 3C-SiC during the solution growth process was determined from in situ interface observation of SiC growth on basal planes of 4H-SiC from Fe-36 mol.%Si alloy at 1680–1885 K. The nucleation behavior of 3C-SiC on 4H-SiC was discussed in terms of classical nucleation theory.
ASJC Scopus subject areas
- Materials Science(all)