In Situ Interface Observation of 3C-SiC Nucleation on Basal Planes of 4H-SiC During Solution Growth of SiC from Molten Fe-Si Alloy

Sakiko Kawanishi, Takeshi Yoshikawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Solution growth is a promising process to obtain high-quality 4H-SiC crystal for application in high-voltage-power devices. Polytype transition from 4H-SiC into 6H-, 15R-, or 3C-SiC is one of the major issues to be solved to achieve rapid growth of large-diameter 4H-SiC crystals. In this study, the mechanism for the polytype transition to 3C-SiC during the solution growth process was determined from in situ interface observation of SiC growth on basal planes of 4H-SiC from Fe-36 mol.%Si alloy at 1680–1885 K. The nucleation behavior of 3C-SiC on 4H-SiC was discussed in terms of classical nucleation theory.

Original languageEnglish
Pages (from-to)1239-1247
Number of pages9
JournalJOM
Volume70
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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