In situ infrared study of chemical state of Si surface in etching solution

Michio Niwano; Yasuo Kimura; Nobuo Miyamoto

doi:10.1063/1.112888

In situ infrared study of chemical state of Si surface in etching solution

Michio Niwano, Yasuo Kimura, Nobuo Miyamoto

Human Information Systems Division

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

Original language	English
Pages (from-to)	1692-1694
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1063/1.112888
Publication status	Published - 1994 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.112888

Fingerprint Dive into the research topics of 'In situ infrared study of chemical state of Si surface in etching solution'. Together they form a unique fingerprint.

Cite this

@article{2b0523f17a98450aa570c0a41de13847,

title = "In situ infrared study of chemical state of Si surface in etching solution",

abstract = "We have]] in situ{"} investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.",

author = "Michio Niwano and Yasuo Kimura and Nobuo Miyamoto",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.112888",

language = "English",

volume = "65",

pages = "1692--1694",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - In situ infrared study of chemical state of Si surface in etching solution

AU - Niwano, Michio

AU - Kimura, Yasuo

AU - Miyamoto, Nobuo

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

AB - We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0000531386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000531386&partnerID=8YFLogxK

U2 - 10.1063/1.112888

DO - 10.1063/1.112888

M3 - Article

AN - SCOPUS:0000531386

VL - 65

SP - 1692

EP - 1694

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -