In situ infrared study of chemical state of Si surface in etching solution

Michio Niwano; Yasuo Kimura; Nobuo Miyamoto

doi:10.1063/1.112888

In situ infrared study of chemical state of Si surface in etching solution

Michio Niwano, Yasuo Kimura, Nobuo Miyamoto

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Abstract

We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

Original language	English
Pages (from-to)	1692-1694
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1063/1.112888
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112888

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title = "In situ infrared study of chemical state of Si surface in etching solution",

abstract = "We have]] in situ{"} investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.",

author = "Michio Niwano and Yasuo Kimura and Nobuo Miyamoto",

year = "1994",

doi = "10.1063/1.112888",

language = "English",

volume = "65",

pages = "1692--1694",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - In situ infrared study of chemical state of Si surface in etching solution

AU - Niwano, Michio

AU - Kimura, Yasuo

AU - Miyamoto, Nobuo

PY - 1994

Y1 - 1994

N2 - We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

AB - We have]] in situ" investigated the chemistry of Si(100) surfaces during immersion in hydrofluoric acid (HF) solution, using infrared spectroscopy in the multiple internal reflection geometry. During immersion in dilute HF solution, hydrogen termination is not completed and hydrogen-associated Si fluorides may be generated on the surface. We demonstrate that water rinse following treatment with HF solution leads to the complete hydrogen termination of Si surfaces.

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DO - 10.1063/1.112888

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

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In situ infrared study of chemical state of Si surface in etching solution

Abstract

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