In situ infrared study of chemical nature of Si surface in etching solution and water

M. Niwano, T. A. Miura, Y. Kimura, R. Tajima, N. Miyamoto

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The chemical nature of Si(100) and (111) surfaces during immersion in dilute hydrofluoric acid (HF) solution and water was investigated 'in-situ' and in real time using infrared absorption spectroscopy in the multiple internal reflection geometry. We demonstrate that in dilute HF solution, Si surfaces are not perfectly terminated by hydrogen, but are covered in part with hydrogen-associated Si fluorides, such as SiH2(SiF). We find that the hydrogen coverage of the surface during storage in dilute HF solution depends on the HF concentration of the solution. It is shown that rinsing in water following HF treatment leads to complete hydrogen termination of the surface. We also show that hydrogen exchange reaction occurs on the hydrogen-terminated Si surface during storage in water.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume432
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Niwano, M., Miura, T. A., Kimura, Y., Tajima, R., & Miyamoto, N. (1997). In situ infrared study of chemical nature of Si surface in etching solution and water. Materials Research Society Symposium - Proceedings, 432, 277-282.