In situ HREM of interface reactions

Robert Sinclair, Toyohiko J. Konno

Research output: Contribution to journalConference article

Abstract

In this paper, in-situ high-resolution electron microscopy (HREM) have been applied to the study of interface reactions, particularly in metal-semiconductor systems. There in contrasting behavior whether or not the manufactured interface undergoes a chemical reaction. The in situ technique allows the determination of the reaction mechanisms on an atomic scale.

Original languageEnglish
Pages (from-to)830-831
Number of pages2
JournalProceedings - Annual Meeting, Microscopy Society of America
Publication statusPublished - 1993 Dec 1
Externally publishedYes
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: 1993 Aug 11993 Aug 6

ASJC Scopus subject areas

  • Engineering(all)

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