In this paper, in-situ high-resolution electron microscopy (HREM) have been applied to the study of interface reactions, particularly in metal-semiconductor systems. There in contrasting behavior whether or not the manufactured interface undergoes a chemical reaction. The in situ technique allows the determination of the reaction mechanisms on an atomic scale.
|Number of pages||2|
|Journal||Proceedings - Annual Meeting, Microscopy Society of America|
|Publication status||Published - 1993 Dec 1|
|Event||Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA|
Duration: 1993 Aug 1 → 1993 Aug 6
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