TY - JOUR
T1 - In situ HREM
T2 - application to metal-mediated crystallization
AU - Sinclair, R.
AU - Konno, T. J.
N1 - Funding Information:
Many former and present colleagues have contributed to the development of in situ HREM, including T. Yamashita, M.A. Parker, A.F. Schwartzman, K.B. Kim, K. Holloway, J. Morgiel, D.H. Ko, T. Itoh, M. Visokay, J.P. Guillemet, H. Tanaka and E. Snoeck. Their work and interaction are much appreciated. Financial support from the National Science Foundation, Grant No. DMR 89-02232, is kindly recognized.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1994/11
Y1 - 1994/11
N2 - In situ high-resolution electron microscopy (HREM) is applied to study the metal-mediated crystallization of amorphous semiconductors. The systems reported here are Ag-Ge and Ag-Si, prepared in trilayer form by sputtering. The observations show that the reaction occurs by nucleation within the metal, followed by diffusion through the solid metal layer with no formation of intermediate, metastable or liquid phases. The reaction temperatures in situ match well with those established by ex situ differential scanning calorimetry (i.e. 275°C and 415°C for the Ge and Si trilayers, respectively), and the measured growth rates provide an activation energy value (1.75 eV) which is consistent with a substitutional counter-diffusion mechanism. The significant benefits of the in situ HREM approach are illustrated by this work.
AB - In situ high-resolution electron microscopy (HREM) is applied to study the metal-mediated crystallization of amorphous semiconductors. The systems reported here are Ag-Ge and Ag-Si, prepared in trilayer form by sputtering. The observations show that the reaction occurs by nucleation within the metal, followed by diffusion through the solid metal layer with no formation of intermediate, metastable or liquid phases. The reaction temperatures in situ match well with those established by ex situ differential scanning calorimetry (i.e. 275°C and 415°C for the Ge and Si trilayers, respectively), and the measured growth rates provide an activation energy value (1.75 eV) which is consistent with a substitutional counter-diffusion mechanism. The significant benefits of the in situ HREM approach are illustrated by this work.
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U2 - 10.1016/0304-3991(94)90162-7
DO - 10.1016/0304-3991(94)90162-7
M3 - Article
AN - SCOPUS:0028533536
VL - 56
SP - 225
EP - 232
JO - Ultramicroscopy
JF - Ultramicroscopy
SN - 0304-3991
IS - 1-3
ER -