In-situ high temperature X-ray diffraction study of Ni/SiC interface reactions

T. Fujimura, S. I. Tanaka

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25 Citations (Scopus)


In-situ experiments on the Ni/SiC interface reaction were carried out with a high temperature X-ray diffractometer capable of measuring the X-ray diffraction pattern in 1-2 s using an imaging plate. The kinetic formation processes of the interface reaction layer were measured in short-period exposure experiments with the apparatus. The time-temperature phase diagram of Ni/SiC in N2 was determined. δ-Ni2Si and θ-Ni2Si (high temperature phase of δ-Ni2Si) were formed at the Ni/SiC interface between 1072 K and 1418 K in N2. The formation of δ-Ni2Si obeyed the parabolic rate law. The value of the activation energy suggests that the diffusion of Ni through δ-Ni2Si controls the rate of formation. The results of thermal expansion coefficient measurements suggest that when a sample is cooled to room temperature, compression caused by δ-Ni2Si occurs on SiC.

Original languageEnglish
Pages (from-to)235-239
Number of pages5
JournalJournal of Materials Science
Issue number2
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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