In-situ experiments on the Cu/Al2O3 interface reaction were carried out with a high temperature X-ray diffractometer capable of measuring the X-ray diffraction pattern in 1-2 s using an imaging plate. The kinetic formation processes of the interface reaction layer were measured by short-period exposure experiments with a high temperature X-ray diffractometer. CuAlO2 was formed at the Cu/Al2O3 interface from 1411 to 1467 K in air. The formation of CuAlO2 obeyed the parabolic rate law. The value of the activation energy suggests that the diffusion of O (included in Cu2O) through CuAlO2 controls the rate of formation. The results of thermal expansion coefficient measurements suggest that when a sample is cooled to room temperature, the magnitude of stress on Al2O3 caused by CuAlO2 and CuO is smaller than that caused by Cu2O.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys