In-situ high temperature X-ray diffraction study of Co/SiC interface reactions

T. Fujimura, S. I. Tanaka

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11 Citations (Scopus)


In situ experiments on the Co/SiC interface reaction were carried out with a high temperature X-ray diffractometer capable of measuring the X-ray diffraction pattern in 1-4 s using an imaging plate. The kinetic formation processes of the interface reaction layer were measured in short-period exposure experiments with the apparatus. The time-temperature phase diagram of Co/SiC in N2 was determined. Co2Si and CoSi were formed at the Co/SiC interface between 921 and 1573 K in N2. The formation of CoSi obeyed the parabolic rate law. The value of the activation energy was 95 kJ/mol. The results of thermal expansion coefficient measurements suggest that when a sample is cooled to room temperature, compressive strain caused by CoSi occurs on SiC.

Original languageEnglish
Pages (from-to)5743-5747
Number of pages5
JournalJournal of Materials Science
Issue number23
Publication statusPublished - 1999 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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