In-Situ FTIR Studies of Reactions at the Silicon/Liquid Interface: Wet Chemical Etching of Ultrathin SiO2 on Si(100)

K. T. Queeney, H. Fukidome, E. E. Chaban, Y. J. Chabal

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We have developed an experimental setup to facilitate study of the surface reactions of single-crystal silicon with Fourier transform infrared (FTIR) spectroscopy in a variety of aqueous environments. Employing a short optical path length through the silicon sample allows access to the critical low-frequency region of the spectrum (∼850-1500 cm-1) that cannot be probed with traditional multiple internal reflection (MIR) techniques. The utility of this technique is demonstrated in a study of the etching of ultrathin SiO2 on Si(100) in dilute hydrofluoric acid. This approach provides in-situ access to the SiO2/Si(100) interface that is revealed as the overlying oxide is stripped away. We find that this layer is, indeed, structurally distinct from the rest of the SiO2 film, consistent with a marked change in reactivity as etching nears the Si(100) substrate.

Original languageEnglish
Pages (from-to)3903-3907
Number of pages5
JournalJournal of Physical Chemistry B
Volume105
Issue number18
DOIs
Publication statusPublished - 2001 May 10
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'In-Situ FTIR Studies of Reactions at the Silicon/Liquid Interface: Wet Chemical Etching of Ultrathin SiO<sub>2</sub> on Si(100)'. Together they form a unique fingerprint.

Cite this