In situ FT-IR and photoluminescence study of porous silicon during exposure to F2, H2O, and D2O

T. Arigane, K. Yoshida, T. Wadayama, A. Hatta

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)

Abstract

In situ FT-IR, photoluminescence (PL), and Raman spectral changes of porous silicon (PS) during F2 and subsequent D2O (H2O) exposures were investigated at room temperature. The transmission FT-IR spectra revealed that the initial F2 exposure etched the H-terminated PS surface to form SiFx species. After D2O exposure in succession, the IR bands due to the SiFx stretching modes decreased in intensity whereas the bands due to the Si-O-Si (around 1100 cm-1), SiD (1540 cm-1) and SiOD (2700 cm-1) stretching modes were observed. Significant changes in PL features of the PS were observed during these gaseous treatments. The average size of the silicon nano-particles estimated from the LO phonon band of the PS remained almost unchanged during the treatments. These results clearly demonstrate that the surface chemistry of PS is crucial for a better understanding of its optical properties.

Original languageEnglish
Pages (from-to)304-308
Number of pages5
JournalSurface Science
Volume427-428
DOIs
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 9th International Conference on Vibrations at Surfaces (VAS9) - Kanagawa-ken, Jpn
Duration: 1998 Oct 121998 Oct 16

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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