In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs

R. Kircher, J. Murota, M. Furuno, K. Aizawa, M. Kato, A. Horinouchi, S. Ono

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.

Original languageEnglish
Pages672-674
Number of pages3
DOIs
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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