A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas