In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs

R. Kircher; J. Murota; M. Furuno; K. Aizawa; M. Kato; A. Horinouchi; S. Ono

doi:10.7567/ssdm.1991.pc6-8

In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs

R. Kircher, J. Murota, M. Furuno, K. Aizawa, M. Kato, A. Horinouchi, S. Ono

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.

Original language	English
Pages	672-674
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.pc6-8
Publication status	Published - 1991 Jan 1
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1991.pc6-8

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In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs. / Kircher, R.; Murota, J.; Furuno, M.; Aizawa, K.; Kato, M.; Horinouchi, A.; Ono, S.

1991. 672-674 Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn.

Research output: Contribution to conference › Paper › peer-review

Kircher, R, Murota, J, Furuno, M, Aizawa, K, Kato, M, Horinouchi, A & Ono, S 1991, 'In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs', Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 91/8/27 - 91/8/29 pp. 672-674. https://doi.org/10.7567/ssdm.1991.pc6-8

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AU - Kircher, R.

AU - Murota, J.

AU - Furuno, M.

AU - Aizawa, K.

AU - Kato, M.

AU - Horinouchi, A.

AU - Ono, S.

PY - 1991/1/1

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N2 - A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.

AB - A low-temperature process has been investigated for the fabrication of delta-doped MOSFETs. The main process steps consist of a low-pressure chemical vapor deposition (LPCVD) at low temperatures and a wet oxidation at 700°C. By this process delta-doped n-channel MOSFETs have been fabricated and compared with conventional ones, containing a homogeneously doped channel layer. It is found that short channel effects can be suppressed by this delta-doped layer.

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Y2 - 27 August 1991 through 29 August 1991

ER -

In-situ doping of epitaxial silicon by low-temperature LPCVD for the fabrication of delta-doped MOSFETs

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