In situ B doping of SiGe(C) using BCl                         3                          in ultraclean hot-wall LPCVD

Yasuo Kunii; Yasuhiro Inokuchi; Atsushi Moriya; Harushige Kurokawa; Junichi Murota

doi:10.1016/j.apsusc.2003.08.089

In situ B doping of SiGe(C) using BCl ₃ in ultraclean hot-wall LPCVD

Yasuo Kunii, Yasuhiro Inokuchi, Atsushi Moriya, Harushige Kurokawa, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In situ B doping of SiGe(C) epitaxial growth on Si using BCl ₃ in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl ₃ was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl ₃ was around 2σ%, which is much better than the case of B ₂ H ₆ dopant gas (12σ%). The deposition rate was scarcely changed with BCl ₃ addition at the lower GeH ₄ and BCl ₃ partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl ₃ is promising as B doping gas for low temperature SiGe(C) epitaxial growth.

Original language	English
Pages (from-to)	68-72
Number of pages	5
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.089
Publication status	Published - 2004 Mar 15

Keywords

Boron
CVD
Doping
Epitaxy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2003.08.089

Cite this

In situ B doping of SiGe(C) using BCl ₃ in ultraclean hot-wall LPCVD . / Kunii, Yasuo; Inokuchi, Yasuhiro; Moriya, Atsushi; Kurokawa, Harushige; Murota, Junichi.

In: Applied Surface Science, Vol. 224, No. 1-4, 15.03.2004, p. 68-72.

Research output: Contribution to journal › Article › peer-review

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title = " In situ B doping of SiGe(C) using BCl 3 in ultraclean hot-wall LPCVD ",

abstract = " In situ B doping of SiGe(C) epitaxial growth on Si using BCl 3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl 3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl 3 was around 2σ%, which is much better than the case of B 2 H 6 dopant gas (12σ%). The deposition rate was scarcely changed with BCl 3 addition at the lower GeH 4 and BCl 3 partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl 3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth.",

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AU - Kunii, Yasuo

AU - Inokuchi, Yasuhiro

AU - Moriya, Atsushi

AU - Kurokawa, Harushige

AU - Murota, Junichi

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N2 - In situ B doping of SiGe(C) epitaxial growth on Si using BCl 3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl 3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl 3 was around 2σ%, which is much better than the case of B 2 H 6 dopant gas (12σ%). The deposition rate was scarcely changed with BCl 3 addition at the lower GeH 4 and BCl 3 partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl 3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth.

AB - In situ B doping of SiGe(C) epitaxial growth on Si using BCl 3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl 3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl 3 was around 2σ%, which is much better than the case of B 2 H 6 dopant gas (12σ%). The deposition rate was scarcely changed with BCl 3 addition at the lower GeH 4 and BCl 3 partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl 3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth.

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