Abstract
In situ B doping of SiGe(C) epitaxial growth on Si using BCl 3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl 3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl 3 was around 2σ%, which is much better than the case of B 2 H 6 dopant gas (12σ%). The deposition rate was scarcely changed with BCl 3 addition at the lower GeH 4 and BCl 3 partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl 3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth.
Original language | English |
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Pages (from-to) | 68-72 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 224 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2004 Mar 15 |
Keywords
- Boron
- CVD
- Doping
- Epitaxy
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films