In situ B doping of SiGe(C) using BCl 3 in ultraclean hot-wall LPCVD

Yasuo Kunii, Yasuhiro Inokuchi, Atsushi Moriya, Harushige Kurokawa, Junichi Murota

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In situ B doping of SiGe(C) epitaxial growth on Si using BCl 3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500°C. Alhough BCl 3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200mm diameter wafer of B-doped SiGe(C) using BCl 3 was around 2σ%, which is much better than the case of B 2 H 6 dopant gas (12σ%). The deposition rate was scarcely changed with BCl 3 addition at the lower GeH 4 and BCl 3 partial pressures range corresponding SiGe(C)-HBT process condition. All the results assured that BCl 3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth.

Original languageEnglish
Pages (from-to)68-72
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Mar 15


  • Boron
  • CVD
  • Doping
  • Epitaxy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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