In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature

Hirokazu Fukidome, Michio Matsumura, Tadahiro Komeda, Kenji Namba, Yasushiro Nishioka

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Si(111) surfaces were found to be easily flattened on an atomic scale by a treatment with water from which oxygen was removed by addition of a chemical deoxygenator. By in situ atomic force microscope measurements of the Si(111) surface, we succeeded for the first time in observing the flow of the steps on the atomically flattened Si(111) surface in oxygen-free water. The average step-flow rate was estimated to be 8 nm/min at room temperature.

Original languageEnglish
Pages (from-to)393-394
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume2
Issue number8
DOIs
Publication statusPublished - 1999 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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