Abstract
Si(111) surfaces were found to be easily flattened on an atomic scale by a treatment with water from which oxygen was removed by addition of a chemical deoxygenator. By in situ atomic force microscope measurements of the Si(111) surface, we succeeded for the first time in observing the flow of the steps on the atomically flattened Si(111) surface in oxygen-free water. The average step-flow rate was estimated to be 8 nm/min at room temperature.
Original language | English |
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Pages (from-to) | 393-394 |
Number of pages | 2 |
Journal | Electrochemical and Solid-State Letters |
Volume | 2 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1999 Aug |
Externally published | Yes |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering