In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

M. Furusawa; J. Tashiro; A. Sasaki; K. Nakajima; M. Takakura; T. Chikyow; P. Ahmet; M. Yoshimoto

doi:10.1063/1.1356451

In situ analysis of the room-temperature epitaxial growth of CeO₂ ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

M. Furusawa, J. Tashiro, A. Sasaki, K. Nakajima, M. Takakura, T. Chikyow, P. Ahmet, M. Yoshimoto

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Abstract

The room-temperature epitaxial growth of CeO₂ films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO₂ ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10^-9 Torr) could be improved remarkably by a few minutes of O₂ gas exposure (∼10^-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]_CeO2∥[110]_S1), was observed for the films thicker than about 1 nm.

Original language	English
Pages (from-to)	1838-1840
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	13
DOIs	https://doi.org/10.1063/1.1356451
Publication status	Published - 2001 Mar 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy",

abstract = "The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10-9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]CeO2∥[110]S1), was observed for the films thicker than about 1 nm.",

author = "M. Furusawa and J. Tashiro and A. Sasaki and K. Nakajima and M. Takakura and T. Chikyow and P. Ahmet and M. Yoshimoto",

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T1 - In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

AU - Furusawa, M.

AU - Tashiro, J.

AU - Sasaki, A.

AU - Nakajima, K.

AU - Takakura, M.

AU - Chikyow, T.

AU - Ahmet, P.

AU - Yoshimoto, M.

PY - 2001/3/26

Y1 - 2001/3/26

N2 - The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10-9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]CeO2∥[110]S1), was observed for the films thicker than about 1 nm.

AB - The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10-9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]CeO2∥[110]S1), was observed for the films thicker than about 1 nm.

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In situ analysis of the room-temperature epitaxial growth of CeO₂ ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

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