Abstract
The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10-9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10-5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([110]CeO2∥[110]S1), was observed for the films thicker than about 1 nm.
Original language | English |
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Pages (from-to) | 1838-1840 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2001 Mar 26 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)