In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Q. K. Xue, Y. Hasegawa, T. Ogino, H. Kiyama, T. Sakurai

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.

Original languageEnglish
Pages (from-to)1270-1273
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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