Abstract
Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1270-1273 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1997 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)'. Together they form a unique fingerprint.
Cite this
Xue, Q. K., Hasegawa, Y., Ogino, T., Kiyama, H., & Sakurai, T. (1997). In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15(4), 1270-1273. https://doi.org/10.1116/1.589449