In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Q. K. Xue; Y. Hasegawa; T. Ogino; H. Kiyama; T. Sakurai

doi:10.1116/1.589449

In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Q. K. Xue, Y. Hasegawa, T. Ogino, H. Kiyama, T. Sakurai

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.

Original language	English
Pages (from-to)	1270-1273
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	4
DOIs	https://doi.org/10.1116/1.589449
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A {"}domain wall{"} structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.",

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T1 - In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

AU - Xue, Q. K.

AU - Hasegawa, Y.

AU - Ogino, T.

AU - Kiyama, H.

AU - Sakurai, T.

PY - 1997

Y1 - 1997

N2 - Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.

AB - Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.

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In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

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