Abstract
Molecular beam epitaxy growth of lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction. We found that deposition of submonolayer (∼0.6 ML) In on the GaAs(001)-As-rich 2×4 surface could result in a new well-ordered 4×2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs will grow two-dimensionally and usually observed 3D islanding is completely suppressed. Atomic structures for the 4×2 reconstruction are discussed on the basis of voltage-dependent STM image. A "domain wall" structure, representing a new type of surface strain relief mechanism in the novel growth will also be discussed.
Original language | English |
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Pages (from-to) | 1270-1273 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 15 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1997 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering